| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory, in which an impedance phase change film capable of storing multi-valued data, used. SOLUTION: An organic material 7 is used as an impedance phase change film, the organic material film is changed in thickness or varied in contact area with an electrode in a memory cell, so as to utilize the hysteresis characteristics of the impedance phase change film, a write voltage VW is set at an impedance state transition point in a hysteresis characteristics, by which data that are stored and held in a memory cell can be made multi-valued (for storing data larger than 1 bit). |
