| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN semiconductor substrate having high quality and a semiconductor light-emitting device and its manufacturing method. SOLUTION: In the semiconductor light-emitting device, a structure in which GaN thick films 106 are laminated on the first substrate in which a GaN low- temperature buffer layer 102, a GaN layer 103 and a selective growth mask 104 composed of SiO2 are formed sequentially on a sapphire substrate 101 is formed. The GaN thick films 106 are grown selectively on the surfaces of the GaN layer 103 exposed in opening sections 105 by an MOCVD method, and growth is further continued, and the thick films are also grown in the lateral direction on the surface of the selective growth mask 104. |
