| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device having high luminous power conversion efficiency and low operating voltage in the semiconductor light-emitting device having a double hetero-junction structure. SOLUTION: In the double hetero-junction type semiconductor light-emitting device having at least the sandwich structure of an n-type clad layer 4, an active layer 5 and a p-type clad layer 6 and being formed of a material in which the band gap energy of the active layer is made smaller than that of both clad layers, the materials of both clad layers are selected so that the band gap energy of the n-type clad layer is made smaller than that of the p-type clad layer. |
