Use of a rapid thermal anneal process to control drive current

摘要

The present invention is directed to a control method for maintaining the drive current of a transistor within acceptable limits. The method comprises determining a size variation of a component of a transistor, e.g., the width of a gate conductor, the width of sidewall spacers or the thickness of the gate dielectric, determining the parameters of an anneal process based upon the determined size variation of the component and performing the anneal process using the determined parameters.