Dry etching method and a TFT fabrication method

摘要

A method for etching a hydrogenated amorphous silicon layer and a metal layer formed thereon in a dry etching tool, is described incorporating the steps of selectively etching the metal layer on the hydrogenated amorphous silicon layer and etching the hydrogenated amorphous silicon layer. The invention overcomes the problem of performing sequential dry etching of a metal layer and a hydrogenated amorphous silicon underlayer in a single etching tool.