发明名称 |
Dummy patterning for semiconductor manufacturing processes |
摘要 |
A method is provided for inserting dummy conductive channels along with the interconnected conductive channels. The dummy channels have an approximately even metal weight distribution to provide better plating uniformity, minimize CMP dishing, improve process heating uniformity, improve spin-on process properties, and increase etch and lithography uniformity.
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申请公布号 |
US6259115(B1) |
申请公布日期 |
2001.07.10 |
申请号 |
US19990262214 |
申请日期 |
1999.03.04 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YOU LU;CHAN SIMON S.;YANG KAI |
分类号 |
H01L21/321;H01L21/768;(IPC1-7):H01L21/56 |
主分类号 |
H01L21/321 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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