METHOD FOR PERFORMING RE-OPERATION IN TIPS PROCESS OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for performing a re-operation in a TIPS(Top Surface Image by Silylation) is provided to prevent a loss of a wafer by removing efficiently oxide components from a photoresist pattern when performing a re-operation due to an inferior pattern or an inferior overlay. CONSTITUTION: A photoresist layer(30) is applied on a whole face formed with a photoresist pattern(10) by performing a dry development process on a lower layer(5). An upper portion of the photoresist pattern(10) is exposed by performing a dry etching process for the photoresist layer(30). Pollutants are removed from the upper portion of the photoresist pattern(10) by using a CF gas. The photoresist pattern(10) and the photoresist layer(30) are removed by performing the dry etching process.