| 摘要 |
PURPOSE: A manufacturing method of semiconductor device is provided to simplify manufacturing steps, and to prevent defect such as a void from an isolation layer. CONSTITUTION: Word lines(2) are formed on a semiconductor substrate(1). To insulate the word lines(2) and flatten the surface, the first insulation layer(3) is vaporized and flattened on the substrate(1). After doping the first oxide layer, a mask pattern is made, and the first and the second contact hole(6,7) are built by etching the exposed the first oxide layer and the insulation layer(3). Removing the mask pattern, a bit line plug(8) and the first plug of capacitor(9) are constructed in each of the first and the second contact hole(6,7). The second oxide layer such as a PE-TEOS(Plasma Enhanced Tetra Ethyl Ortho Silicate) layer covers the whole structure. Being doped the second insulation layer(11), an anti-reflective layer is vaporized. Etching the second insulation layer part and the second oxide layer part following the shape of second mask pattern, the third and the fourth contact hole(14,15) are made. For filling the third and fourth contact hole(14,15), a doped polysilicon is evaporated. A bit line(16a) and the second plug of capacitor(16b) are produced in the third and the fourth contact hole(14,15), respectively, to contact the bit line plug(8) and the first plug of capacitor(9). The third insulation layer(17), a nitride layer(18), the third oxide layer(19) are formed in order.
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