| 摘要 |
PURPOSE: A method for forming a copper line of a semiconductor device is provided to reduce the required time of a polishing process and the amount of slurry by improving the process to omit a polishing process of a conductor diffusion-preventing film. CONSTITUTION: After forming an interlayer insulation film(10) on a substrate, a damascene pattern comprising a trench and a contact hole is formed by a damascene method. A conductor diffusion-preventing film(11) and a photo resist film are formed in sequence on a surface of the interlayer insulation film including the damascene pattern. The conductor diffusion-preventing film is formed using Ta or TaN. The photo resist film is patterned using a reverse mask, and thus a photo resist pattern is formed on the damascene pattern. The diffusion -preventing film remains only on the damascene pattern by removing the revealed conductor diffusion-preventing film. After removing the photo resist pattern, a copper layer(13) is formed on the whole structure to bury the damascene pattern. After polishing the copper layer until an upper surface of the interlayer insulation film is revealed by a CMP(Chemical Mechanical Polishing) process using a slurry for polishing a copper, a copper line is formed in the damascene pattern by buffering or cleaning the copper layer in the CMP apparatus.
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