METHOD OF FORMING METAL WIRING IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A forming method of metal wiring in a semiconductor device is provided to reduce contact resistance without degradation of electric features by forming a C-54 TiSi2 film excellent in contact resistance. CONSTITUTION: An interlayer insulation film(2) is formed on a semiconductor substrate(1), and a contact hole(3) is formed to expose the silicon substrate(2). A Ta film(4) is formed on the whole upper surface including the contact hole(3) through physical vapour deposition. A barrier metal layer(5) is formed on the Ta film(4). A low-temperature rapid thermal process is performed to form a silicide layer(6) on the silicon substrate(2) at the bottom of the contact hole(3). A metal layer(7) is deposited on the whole upper surface including the silicide layer(6) to fill the contact hole(3) and patterned to form a metal wiring.