METHOD OF FORMING RESIST PATTERN USING 248NM KRF EXPOSURE APPARATUS

摘要

PURPOSE: A forming method of resist pattern is provided to enable precision and uniformity of a resist pattern of an under-0.13microns CD using 248nm KrF exposure apparatus. CONSTITUTION: A 248nm KrF exposure apparatus is used to form a resist pattern. The surface of a layer to be etched is surface treated using an HMDS solution. A resist is coated on the surface treated layer. The resist is soft baked. The hardened resist is exposed. The exposed resist is heat treated several times. The heat treated resist is developed. The resist is a negative type having low molecular weight. A P.E.B. process is performed in several steps to enhance precision and uniformity of the resist pattern.