METHOD FOR SIMULTANEOUSLY ETCHING POLY SILICON LAYER AND OXIDE SILICON LAYER

摘要

PURPOSE: A method for simultaneously etching a poly silicon layer and an oxide silicon layer is provided to etch the poly silicon layer and the oxide silicon layer at a same etching speed. CONSTITUTION: A poly silicon layer(16) and an oxide silicon layer(14) are formed on a silicon substrate(10). The poly silicon layer(16) and oxide silicon layer(14) are successively etched in a same etching equipment by C1HmFn(1,m,n: natural number) gas. A ratio of 1 plus m:n is minimum 1:3.