| 摘要 |
PURPOSE: A method for chemically and mechanically planarizing a polymer-based low-k interlayer dielectric is provided to improve reliability and yield by guaranteeing polishing uniformity regarding the entire wafer in a chemical mechanical polishing(CMP) process, and to improve productivity by reducing the time necessary for planarization to a tenth. CONSTITUTION: A polymer-based interlayer dielectric(12) is formed on a lower layer(10) having a predetermined conductive layer. Impurity ions for breaking the C-H bonding of the polymer-based interlayer dielectric are selectively implanted into a region of the polymer-based interlayer dielectric wherein the region has a relatively high topology.
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