METHOD FOR MANUFACTURING ALIGNMENT MARK IMPROVING ALIGNMENT PRECISION

摘要

PURPOSE: A method for manufacturing an alignment mark improving alignment precision is provided to improve an overlay degree of a pattern in a subsequent process, by improving alignment precision. CONSTITUTION: A trench type isolation layer is formed on a semiconductor substrate(30). The trench type isolation layer in an alignment mark region is recessed to form a step. A material layer for forming a gate electrode including at least a metallic material layer is formed along the surface of the resultant structure having the step. The material layer for forming the gate electrode is selectively etched by using the mask for the gate electrode wherein the material layer for forming the gate electrode is left in the alignment mark region. An interlayer dielectric(37) is formed on the entire structure. The interlayer dielectric is selectively etched to form a contact hole. An alignment of the trench isolation layer and the contact hole is measured by using predetermined measuring light.