METHOD FOR MANUFACTURING DAMASCENE GATE TYPE MOS TRANSISTOR USING SELECTIVE EPITAXIAL GROWTH METHOD

摘要

PURPOSE: A method for manufacturing a damascene gate type MOS transistor using a selective epitaxial growth method is provided to form uniformly a thickness of a gate by using a selective epitaxial growth method. CONSTITUTION: A dummy gate pattern is formed on a semiconductor substrate(20) by using a nitride layer. An oxide layer spacer(23) is formed at a sidewall of the dummy gate pattern. A selective epitaxial layer(24a) is formed on the exposed semiconductor substrate(20). An interlayer dielectric(25) is formed on the whole structure. The dummy gate pattern is exposed by flattening the interlayer dielectric(25). The dummy gate pattern is removed. A gate insulating layer(26) and a conductive layer(27) for gate electrode are buried therein.