| 摘要 |
PURPOSE: A method for chemically and mechanically planarizing a polymer-based low-k interlayer dielectric is provided to guarantee polishing uniformity regarding the entire wafer and to shorten the time necessary for planarization by less than a half, by increasing a polishing speed of the polymer-based low-k interlayer dielectric by at least 10. CONSTITUTION: A polymer-based interlayer dielectric(12) is formed on a lower layer(10) having a predetermined conductive layer. A chemical mechanical polishing(CMP) process is performed to planarize the polymer-based interlayer dielectric by using fluroro-carbon-based polishing pad and ceria-based slurry.
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