METHOD FOR PLANARIZING INTERLAYER DIELECTRIC OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for planarizing an interlayer dielectric of a semiconductor device is provided to guarantee operating stability, by improving a planarization characteristic of the interlayer dielectric to prevent a short-circuit between a capacitor and a metal interconnection. CONSTITUTION: An interlayer dielectric(53) is formed on the entire structure wherein a lower structure of a cell region(C) and a peripheral circuit region(P) is formed. A photoresist pattern(54) is formed on the interlayer dielectric in the peripheral circuit region. The interlayer dielectric exposed in the cell region is etched, wherein the etching process is performed by using a capacitor topology recess mask of which a corner portion of an open part is round.