METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A cleaning method for semiconductor substrate is provided to enhance yield and reliability of a semiconductor device manufacturing process by effectively removing copper and other byproducts from a semiconductor substrate. CONSTITUTION: A semiconductor substrate is polished using chemical mechanical polishing to expose an interlayer insulation film and a copper wiring layer. The semiconductor substrate is first cleaned using a cleaning solution composition including deionized water and urea or thiurea 0.01 to 10 wt% based upon the weight of deionized water to stabilize the exposed copper wiring layer. The semiconductor substrate is second cleaned using a cleaning solution composition including deionized water and hydrofluoric acid 0.05 to 0.5wt% based upon the weight of deionized water and urea or thiourea 0.01 to 10wt% to remove metal particle pollution on the exposed interlayer insulation film.