| 摘要 |
PURPOSE: A method for fabricating a capacitor is provided to prevent an open by removing a nitride film between a node contact and a capacitor bottom electrode, and also to assure insulation between a bit line and the capacitor bottom electrode. CONSTITUTION: The first interlayer insulation film(22) is formed on a semiconductor substrate(21), and a bit line(23) is formed by etching a conductive material. And, after planarizing the second interlayer insulation film(24), a nitride film(25) and the third interlayer insulation film and the first polysilicon film and a photoresist film(PR2) are formed in sequence. Then, a contact hole is formed by etching the first polysilicon film and the third interlayer insulation film and the nitride film and the second and the first interlayer insulation film by patterning the photo resist film. Then, the photo resist film is removed, and a node contact(28) is formed by etching back a conductive material to reveal the third interlayer insulation film. Then, an oxide is formed, and the second polysilicon film(30) is formed after patterning the oxide and the third interlayer insulation film and the nitride film and the node contact. And, a SOG(Spin On Glass) is deposited on an upper part of the wafer and is etched back to reveal the second polysilicon film by removing the SOG. The second polysilicon film is etched to reveal the oxide, and the remaining SOG and the oxide and the third interlayer insulation film are removed by a wet etching.
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