DRAM STORAGE ELECTRODE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A DRAM storage electrode and a method for forming the same are provided to form a new storage for restraining an aperture of a polysilicon layer or a twin bit phenomenon. CONSTITUTION: A hole for storage electrode is formed on an upper side of a buried contact(18) after laminating a sacrificial layer. A polysilicon(33,35) is laminated on the hole for storage electrode. A storage electrode is formed by removing the polysilicon layer formed on an upper side of the sacrificial layer. The remaining sacrificial layer is removed. An HSG(HemiSpheral Grain) projection(51) is formed on a surface of the polysilicon layer(33,35). In the laminating process of the polysilicon layer, a low density doped polysilison layer(33), a high density doped polysilicon layer(35), and a low density doped polysilicon layer are laminated sequentially on the hole for storage electrode.