METHOD FOR FORMING THIN FILM USING CVD METHOD AND OPTIMIZING POST-THERMAL DOPING CONDITION

摘要

PURPOSE: A method for forming a thin film using a CVD(Chemical Vapor Deposition) method and optimizing a post-thermal doping condition is provided to optimize a processing condition by using thermodynamic data. CONSTITUTION: A deposition condition of an element forming a sing material/a compound is set up(S10). A balanced partial pressure of a depositing material is obtained according to the deposition condition by using a free energy minimization method(S12). A supersaturated ratio is calculated by dividing the balanced partial pressure into a balanced vapor pressure(S14). The variation according to a pressure or the variation of the supersaturated ratio according to the dopant amount is calculated under a constant temperature(S16). A depositing speed is calculated according to a depositing material and the pressure by comparing the calculated value with measured data(S18).