METHOD FOR MANUFACTURING FINE T-TYPED(GAMMA-TYPED) GATE USING PHOTOLITHOGRAPHY PROCESS AND SACRIFICIAL INSULATION LAYER

摘要

PURPOSE: A method for manufacturing a fine T-typed(gamma-typed) gate is provided to reduce manufacturing cost by using a photolithography process to form the gate, and to guarantee repeatability by easily controlling a size and shape of a head and a leg of the fine gate. CONSTITUTION: The first sacrificial insulation layer is formed on a substrate having a predetermined lower layer. The first photoresist layer is applied on the first sacrificial insulation layer. A mask process is performed by using the first photo mask to form the first photoresist layer pattern exposing the first region including a gate leg region. The exposed first sacrificial insulation layer is selectively etched by using the first photoresist layer pattern as an etching mask. The second sacrificial insulation layer having etching selectivity with the first sacrificial insulation layer is formed along the entire structure in which the first photoresist pattern is eliminated. The second photoresist layer is applied. A mask process is performed in a state that the first photomask is shifted by a predetermined line width, to form the second photoresist layer pattern exposing the second region including a portion of the first region. The exposed sacrificial insulation layer is selectively etched to define the gate leg region and a gate head region by using the second photoresist layer pattern as an etching mask. A metal layer for a gate is formed on the resultant structure. The second photoresist layer pattern is lifted off to form a gamma-typed gate.