METHOD FOR MANUFACTURING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a metal interconnection of a semiconductor device is provided to basically prevent diffusion of copper in a copper interconnection process using a dual damascene method, by performing an etch process before a diffusion blocking layer is formed. CONSTITUTION: An insulation layer(101) is formed on a substrate(100). The first diffusion blocking layer(102) and a lower copper interconnection(103) are formed on the insulation layer. The first etch blocking layer(104), the first interlayer dielectric(105), the second etch blocking layer(106) and the second interlayer dielectric(107) are sequentially formed on the entire surface. A portion of the second interlayer dielectric, the second etch blocking layer and the first interlayer dielectric are removed to expose the first etch blocking layer on the lower copper interconnection by a dual damascene method. A trench of a dual structure is formed, and the second diffusion blocking layer(109) are deposited on the entire surface. The first etch blocking layer formed on the lower copper interconnection is entirely etched by a dry etching method. The third diffusion blocking layer(111) is deposited on the entire surface. An upper copper interconnection(112) is deposited on the entire surface to bury the trench of a dual structure.