| 摘要 |
PURPOSE: A manufacturing method of an in-plain field switching mode LCD is provided to be capable of reducing manufacturing steps while assuring the aperture rate of the LCD. CONSTITUTION: First, gate bus lines(11), comb type counter electrodes(11a) and gate pads are formed by depositing a metal layer on a lower substrate(10) and then patterning a portion of the metal layer. Then, a gate insulating layer(12), an amorphous Si-layer for channels and an amorphous Si-layer having impurities doped are sequentially stacked on the lower substrate. Next, a channel layer(13) and an ohmic layer(14) are formed by patterning the two Si-layers to exist on predetermined portions of the gate bus lines. Then, the gate pads are exposed by partially etching the gate insulating layer. Next, data bus lines, source/drain electrodes(17a,17b) and pixel electrodes are formed by sequentially depositing a transparent conduct layer and an opaque metal layer on the lower substrate and then patterning the layers. Then, a passivation layer(18) is deposited and then is etched to expose the counter electrodes and the pixel electrodes. Finally, transparent pixel electrodes are formed by selectively etching the exposed pixel electrodes.
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