| 摘要 |
PURPOSE: A method for manufacturing a bit line of a semiconductor device is provided to easily form a bit line of a tungsten material without a titanium layer, and to prevent a characteristic from being degraded in a junction region by forming a tungsten silicon nitride layer between a tungsten layer and the junction region. CONSTITUTION: A transistor including a gate electrode(12b) and a junction region(12c) is formed on a semiconductor substrate(11). An interlayer dielectric(13) is formed on the entire surface of the semiconductor substrate to cover the transistor. A polysilicon thin film(14) is formed on the interlayer dielectric. The polysilicon thin film and the interlayer dielectric are etched to form a contact hole exposing the junction region of the transistor. A tungsten nitride layer is deposited on the polysilicon thin film to bury the contact hole. A tungsten silicon nitride layer is formed on an interface between the junction region and the tungsten nitride layer. A heat treatment is performed regarding the resultant structure to convert the tungsten nitride layer to a tungsten layer(16a). The tungsten layer and the polysilicon thin film are patterned.
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