| 摘要 |
PURPOSE: A method for manufacturing a fine pattern of a semiconductor device is provided to reduce the line width of a line pattern by forming a spacer on both sidewalls of a contact hole, and to easily control the line width of the line pattern according to the thickness of a deposited insulating layer. CONSTITUTION: A patterning thin film, a hard mask layer(23), a silicon layer and an oxide layer are sequentially formed on a semiconductor substrate(21). The oxide layer is patterned to form a contact hole exposing the silicon layer. A spacer is formed on a sidewall of the contact hole. A silicon epi layer is grown in the silicon layer portion exposed by the contact hole. The spacer and the oxide layer are eliminated. The silicon layer and the hard mask layer are etched by using the silicon epi layer as a mask. The patterning thin film is etched by using the hard mask layer as a mask.
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