发明名称 A Method of Making a Semiconductor Device
摘要 1,184,797. Semi-conductor devices. HITACHI Ltd. 20 March, 1967 [23 March, 1966], No. 37163/69. Divided out of 1,184,796. Heading H1K. The disclosure of the present Specification is included in Specification 1,184,796 from which it has been divided but the claims relate to the diffusion of gallium into a semi-conductor body through an aperture in a silicon nitride masking film.
申请公布号 GB1184797(A) 申请公布日期 1970.03.18
申请号 GB19690037163 申请日期 1967.03.20
申请人 HITACHI LTD. 发明人
分类号 H01L21/00;H01L21/033;H01L21/318;H01L23/29;H01L23/485 主分类号 H01L21/00
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