发明名称 WORD LINE DRIVE CIRCUIT
摘要 PURPOSE: A word line drive circuit is provided to reduce the time for activating a word line by connecting a boosting driver to the both ends of a px line and driving the px line for improving the pull-up characteristic of the px line. CONSTITUTION: The word line drive circuit includes a plurality of memory cell blocks(110) connected in series, a main word line drive portion(120), a plurality of sub-word line drive portions(140) and the first and second boosting line drive portions(130,230). The main word line drive portion positions in an end of the memory cell block, and selectively drive a main word line in response to a row decode signal. The sub-word line drive portion positions between the memory cell blocks and supplies a high voltage to a selected sub-word line by combining the main word line and a boosting line. The first and second boosting line drive portions connected with end of the boosting line and selectively drive the boosting line.
申请公布号 KR20010063621(A) 申请公布日期 2001.07.09
申请号 KR19990060799 申请日期 1999.12.23
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUNG, JI YUN
分类号 G11C8/08;(IPC1-7):G11C8/08 主分类号 G11C8/08
代理机构 代理人
主权项
地址