METHOD FOR MANUFACTURING FINE PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a fine pattern of a semiconductor device is provided to form a photoresist pattern of the fine pattern, by overcoming a limit of a light source in a photolithography process in a simplified method. CONSTITUTION: An insulation layer is formed on a target layer to etch. At least two photoresist patterns having the first interval are formed on the insulation layer. The insulation layer is etched to have the second interval smaller than the first interval by using fluorine-based gas plasma while the photoresist pattern is eroded. The target layer is etched to have the second interval.