| 摘要 |
PURPOSE: A method for planarizing a semiconductor device is provided to reduce process variation and manufacturing cost and to easily control a degree of planarization, by using two planarization methods such as partial planarization by a sputtering method and planarization by a chemical mechanical polishing(CMP) method. CONSTITUTION: A substrate(31) having a plurality of interconnections(32) is prepared. The first insulation layer(33) is formed on the entire surface. The first insulation layer is partially planarized by a sputtering method. The second insulation layer(34) is formed on the partially-planarized first insulation layer. The second insulation layer is planarized by a chemical mechanical polishing(CMP) method.
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