METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to increase a depletion region and a breakdown voltage by reducing a doping density of a junction region. CONSTITUTION: A gate electrode is formed on an upper portion of a semiconductor substrate(11). A low density N type source/drain junction region(19a,19b) is formed by using the gate electrode. An insulating layer spacer(17) is formed at a sidewall of the gate electrode. A plug poly is formed on an upper portion of the whole structure. A contact pad(25) is formed on the low density N-type drain junction region by patterning the plug poly. A source junction region of an LDD structure is formed by implanting high density N-type dopant ions into the low density N-type drain junction region.