| 摘要 |
PURPOSE: A method for manufacturing a gate oxide layer of a semiconductor device is provided to improve a leakage current characteristic and step coverage in forming a next-generation logic device and a memory device, by using an aluminum oxide layer having high permittivity as a gate oxide layer. CONSTITUTION: A silicon oxide ultra thin film(13) is formed on a semiconductor substrate(11) having an isolation layer(12). An aluminum layer(14A) is formed on the silicon oxide ultra thin film. The aluminum layer is oxidized to form an aluminum oxide layer(14).
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