| 摘要 |
PURPOSE: A method for forming a gate electrode of a semiconductor device is provided to prevent a tungsten layer from being oxidized, by performing a high temperature oxidation process to recover the damage of a substrate before forming a tungsten gate electrode. CONSTITUTION: The first gate electrode is formed using a polysilicon on a semiconductor substrate(201) where a gate oxide(202) is formed. An oxide is formed on a whole structure by a high temperature oxidation process. And an LDD(Lightly Doped Drain) region(206) is formed on the revealed semiconductor substrate, and a junction region(208) is formed after forming the first spacer(207) on a side wall of the first gate electrode. An interlayer insulation film for a gap filling is formed. And the interlayer insulation film and the oxide and the upper part of the polysilicon film are polished. The second gate electrode overlapped with the first gate electrode is formed by patterning an adhesion layer(211), a tungsten layer(212), a mask oxide film(213) and the second anti reflection film(214). Then, the second spacer(216) is formed on a side wall of the second gate.
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