| 摘要 |
PURPOSE: A method for manufacturing a transistor of a semiconductor device is provided to prevent etching damage to a gate electrode in a subsequent contact process by forming a gate protection layer by a damascene method, and to improve reliability and yield by forming the gate electrode smaller than a conventional mask. CONSTITUTION: A sacrificial oxide layer is formed on a semiconductor substrate(11) having a well. A portion of the sacrificial oxide layer is etched to form a damascene pattern. A sacrificial nitride layer spacer is formed inside the damascene pattern. A gate oxide layer(15) is formed on the semiconductor substrate in a lower surface of the damascene pattern having the sacrificial nitride layer spacer. A gate electrode(160) is formed on the gate oxide layer. The sacrificial nitride layer spacer is removed, so that the semiconductor substrate between the sacrificial oxide layer and the gate electrode is exposed. A lightly-doped-drain(LDD) ion implantation region(18a) is formed on the exposed semiconductor substrate. A nitride layer is formed to bury the damascene pattern. The nitride layer is polished to expose an upper end of the sacrificial oxide layer so that a gate protection layer(190) covering the gate electrode is formed in the damascene pattern. After the sacrificial oxide layer is eliminated, a high density ion implantation region(18b) is formed in the semiconductor substrate to form a source/drain junction part(18).
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