| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to increase reliability by improving a refresh characteristic, and to reduce a fail by controlling generation of a bridge between conductive patterns. CONSTITUTION: The first interlayer dielectric(22) is formed on a semiconductor substrate(21) having a lower structure, and a selected portion is etched to form a plug contact. A polysilicon layer and the first anti-reflecting layer(24) are sequentially formed on the entire structure, and are patterned to form a polysilicon plug. The second interlayer dielectric(25) is formed on the entire structure. The second interlayer dielectric and the first anti-reflecting layer in the selected portion are eliminated to form a contact by using a photoresist layer(26) as a mask. A plug ion implantation process is performed. The photoresist layer is removed, and a cleaning process is carried out. An oxide layer is formed on the entire structure, and is entirely etched to form an oxide layer spacer(27) on a sidewall of the contact. A cobalt layer(28) is formed on the entire structure including the contact, and a heat treatment is performed to form a cobalt silicon layer(29) on a lower portion and a sidewall of the contact. A conductive layer and the second anti-reflecting layer(31) are sequentially formed on the entire structure, and are patterned to form a conductive pattern(30).
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