Method and apparatus for producing single crystal of silicon carbide

摘要

Silicon carbide single crystal is produced by allowing a silicon raw material to continuously react with a carbon raw material to generate gas and allowing the gas to reach a seed crystal substrate on which a silicon carbide single crystal grows. Preferably, the silicon raw material is continuously fed onto the carbon raw material placed in a reaction crucible, and the carbon raw material is maintained at a temperature such that carbon is allowed to react with silicon in a molten or gaseous state to generate the reaction gas. An apparatus used for producing the silicon carbide single crystal comprises a reaction crucible, and a seed crystal substrate disposed in the crucible; and further comprises means for maintaining the carbon raw material placed in the crucible at a temperature such that carbon is allowed to react with silicon in a molten or gaseous state to generate the reaction gas, and means for continuously feeding the silicon raw material onto the carbon raw material placed in the crucible.