FUSE STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

摘要

PURPOSE: A fuse structure of semiconductor device is provided to effectively prevent moisture penetration through the interface of interlayer insulation films by forming a protective film at the side wall of a fuse opening using a passivation film without adding a process. CONSTITUTION: A fuse structure of semiconductor device has a fuse line(124), the first interlayer insulation film(126), the second interlayer insulation film(140) and a passivation film(144). The first interlayer insulation film(126) is formed on the fuse line(124) and exposed by a fuse opening(148). The second interlayer insulation film(140) is formed on the first interlayer insulation film(126) and has the fuse opening(148). The passivation film(144) integrally covers across the top layer of a semiconductor device, the upper part of the second interlayer insulation film(140) and the fuse opening(148) for preventing penetration of moisture through the side wall of the fuse opening(148).