| 摘要 |
PURPOSE: A method for forming a gate electrode of a semiconductor device is provided to prevent the generation of a polymer due to etching of a titanium nitride layer by forming a tungsten silicide on an interface of a tungsten layer and a titanium nitride layer. CONSTITUTION: A gate insulating layer(21,31) and a titanium nitride layer(23,33) are laminated on a semiconductor substrate. A tungsten silicide layer(25,39) is formed on an upper portion of the titanium nitride layer(23,33). A tungsten layer(27,37) is formed on an upper portion of the tungsten silicide layer(25,39). A hard mask(41) is formed on an upper portion of the tungsten layer(27,37). The tungsten layer(27,37) is etched by using the hard mask(41) and the tungsten silicide layer(25,39) as an etching barrier.
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