| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to easily guarantee a define margin of the capacitor even if the device is scaled down, by using the first polysilicon layer as a define mask of the capacitor. CONSTITUTION: The first planarizing passivation layer(38) having a contact hole is formed between transistors. A poly plug is formed in the contact hole. The first insulating layer and the first semiconductor layer are stacked on the first planarizing passivation layer over the poly plug. The second semiconductor layer surrounds the first insulating layer and the first semiconductor layer. The second insulating layer is formed to cover the second semiconductor layer. The second insulating layer is etched back to the height of the first insulating layer. The second and first semiconductor layers are polished and etched back until an upper surface of the first insulating layer is exposed to form a storage node. A dry cleaning is performed regarding the entire surface. The first and second insulating layers are eliminated. A dielectric layer(46) is formed on the storage node. A plate node(47) is formed on the entire surface including the dielectric layer.
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