| 摘要 |
PURPOSE: A method for cleaning a dry etching apparatus is provided, to remove the polymer pollutant from the components of the apparatus without damaging the components, thereby enhancing the lifetime of the expensive components. CONSTITUTION: The components of a dry etching apparatus, especially the ceramic components and the insulators are cleaned by the treatment of O2 plasma. The method comprises the steps of disassembling the components of a dry etching apparatus; washing the components with acetone; heating the components at the temperature higher than the temperature of dry etching process; treating the components with the O2 plasma; and post-treating the components by ultrasonic cleansing, weak physical surface treatment, deionized water rinsing and isopropyl alcohol drying. Preferably the temperature of heating process is 100-150 deg.C; and the O2 plasma treatment is carried out by 350 W for 5-8 min. |
