CMP(CHEMICAL MECHANICAL POLISHING) METHOD

摘要

PURPOSE: A CMP(Chemical Mechanical Polishing) method is provided to reduce the amount of slurry consumption and to prolong the lifetime of a polishing pad as increasing WPH(Wafer Per Hour). CONSTITUTION: A polishing apparatus comprises a polishing unit(30) polishing an interlayer insulation film formed on a wafer chemically and mechanically, a cleaning unit(10) to clean the polished wafer, and a carrier unit(20) supplying the polished wafer to the cleaning unit one by one. The polishing unit has a platen(31) where a polishing pad is attached and a head which is arranged on the platen and to which the wafer is fixed. And a nozzle to supply slurry is comprised in the polishing unit. The head has a retaining ring inserted into an edge of a flat plate and a membrane installed on a bottom of the flat plate, and an inner tube is intervened between them.