METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of semiconductor device is provided to stabilize operation features of a transistor by smoothing electric field concentration in the periphery of an active area isolated by an STI process. CONSTITUTION: A nitride film, a hot oxide film and a non-reflective film are layered in sequence on a silicon substrate(10) to isolate an active area of the substrate(10). A photosensitive film pattern is formed on the non-reflective film. The non-reflective film, the hot oxide film and the nitride film are etched to expose the silicon substrate(10). A hot oxide film is layered on the substrate(10) and spacers of the hot oxide film are formed. A trench is formed to limit an active area and a field area. A field oxide film(20) is layered, and a nitride film is flattened. A nitride film(30) is layered on the field oxide film(20) and spacers of the nitride film(30) are formed. A gate oxide film(40) is formed through a thermal oxidation process. A polysilicon layer(50) is layered on the gate oxide film(40). The polysilicon layer(50) and the gate oxide film(40) are patterned to form a gate electrode.