发明名称 CMOS INVERTER CIRCUIT CAPABLE OF ADJUSTING TRANSITION LEVEL OF OUTPUT SIGNAL
摘要 PURPOSE: A CMOS inverter circuit capable of adjusting transition level of output signal is provided to vary input level which the output signal transits to freely by using a floating gate transistor. CONSTITUTION: The CMOS inverter circuit has the CMOS inverter part(510) and the controller(520). The CMOS inverter part(510) has the a PMOS transistor(P51) and the NMOS floating gate transistor(NFGT) which are connected to each other serially to take CMOS form. The controller(520) is connected to the NMOS floating gate transistor(NFGT) and controls threshold voltage by varying initial voltage applied to the floating gate. When the initial voltage is high, the floating gate voltage is increased to make the threshold voltage lower and the initial voltage is low, the floating gate voltage is reduced to make the threshold voltage higher.
申请公布号 KR20010062920(A) 申请公布日期 2001.07.09
申请号 KR19990059671 申请日期 1999.12.21
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, MIN GYU
分类号 H03K19/017;(IPC1-7):H03K19/017 主分类号 H03K19/017
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