| 摘要 |
PURPOSE: A method for manufacturing a transistor of a semiconductor device is provided to prevent damage to a gate electrode in a subsequent etching process, by forming the gate electrode by a damascene method wherein an insulation layer spacer is formed on a sidewall of the gate electrode and a hard mask is formed on the gate electrode. CONSTITUTION: A stacked structure of an oxide layer and polysilicon is formed on a semiconductor substrate(21). The stacked structure is patterned by a photolithography process using a gate electrode mask. An insulation layer spacer(29) is formed on a sidewall of the patterned stacked structure. Impurity ions are implanted into the semiconductor substrate to form an impurity junction region. The stacked structure and a planarized inner oxide layer(31) are formed on the entire surface. The stacked structure is eliminated. Alumina(33) as a gate insulation layer and a tungsten/tungsten nitride layer(35) for a gate electrode are consecutively formed on the entire surface. An etch-back process is performed to the tungsten/tungsten nitride layer in an upper portion between the insulation layer spacers. A hard mask(37) is formed on the tungsten/tungsten nitride layer between the insulation layer spacers.
|
