| 摘要 |
PURPOSE: A high threshold voltage transistor is provided to prevent degradation of a semiconductor device by forming a source/drain junction region as a conductive well. CONSTITUTION: A gate electrode(21) is formed on an upper portion of a semiconductor substrate(11) of the first conductive type. An isolation layer(13) for defining an active region is formed on the semiconductor substrate(11). The first conductive well(15) or the second conductive well(17) is formed at a lower portion of the isolation layer(13). The second conductive well(17) or the first conductive well(15) is formed at both sides of the gate electrode(21). A high density dopant junction region of the second conductive type or a high density dopant junction region(19) of the first conductive type is formed within the second conductive well(17) or the first conductive well(15). The first or the second conductive type channel is formed on the first conductive well(15) or the second conductive well(17).
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