METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to form a fine pattern by removing a SO2 gas used in a photoresist layer etching process to prevent a breakdown phenomenon of the photoresist layer. CONSTITUTION: An etching layer is formed on a semiconductor substrate. A photoresist layer is applied on the etching layer of the semiconductor substrate. The photoresist layer has a thickness of 5000 to 3000 angstrom. A photoresist layer pattern is formed by etching selectively the photoresist layer. The remaining SO2 gas used in the process for etching the photoresist layer is removed.