| 摘要 |
PURPOSE: A method for manufacturing a contact hole is provided to form a uniform mask pattern, by forming a lower insulation layer before a mask process to use a planarization characteristic caused by an SOG contact. CONSTITUTION: The first insulation layer(3), the second insulation layer(4) and the third insulation layer(5) are sequentially formed on a semiconductor substrate(1) having a field oxide layer. Spin-on-glass(SOG) is applied and planarized on the third insulation layer. A photoresist layer is formed on the topology planarized by the SOG, and partially etched. An etching process is carried out to expose the first insulation layer by using the photoresist layer as a mask. The photoresist layer is eliminated by a photoresist layer strip process. The SOG is eliminated while an etch-back process is performed to ultimately form a contact hole(8) without a mask.
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