| 摘要 |
PURPOSE: A method for manufacturing a flash memory device is provided to improve an erasing efficiency of a device by preventing an oxidation of a dielectric layer. CONSTITUTION: A tunnel oxide layer(203), an HV oxide layer(204), and a gate oxide layer(205) are formed on a semiconductor substrate(201). The first polysilicon layer(206), a dielectric layer(207), and the second polysilicon layer(208) are formed on the whole structure. The second polysilicon layer(208) and the dielectric layer(207) of an HV transistor region and an LV transistor region are removed. A top polysilicon layer(209), a tungsten silicide layer(210), and an anti-reflective layer(211) are formed on the whole structure. An HV transistor and an LV transistor are formed by patterning the first polysilicon layer(206) and a stack structure of the HV transistor region and the LV transistor region. A spacer nitride layer(212) is formed at a patterned cell region and sidewalls of the HV transistor region and the LV transistor region. A cell is formed by etching the exposed first polysilicon layer(206). A source/drain region is formed thereon.
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