| 摘要 |
PURPOSE: A capacitor forming method for a semiconductor device is provided to ensure capacitance sufficient for high integration of the semiconductor device by increasing the surface area of a capacitor through formation of a pillar in the center of a cylinder. CONSTITUTION: A lower insulation layer(33) is formed having contact plugs(39) on a semiconductor substrate(31). An oxide film(41) is formed on the lower insulation layer(33) for forming a storage electrode. The oxide film(41) is etched through photoengraving using a storage electrode mask, and over-etched to etch the upper side of the lower insulation layer(33) to form pillars from the contact plugs(39). A barrier metal layer(45) and a lower electrode material layer(47) are formed on the whole surface, and the upper side thereof is flattened using a photosensitive film. The oxide film(41) is exposed through flattening etching. The photosensitive layer is removed, and a dielectric layer(51) and a plate electrode(53) are formed on the whole surface.
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