| 摘要 |
PURPOSE: A unit pixel of a complementary metal-oxide-semiconductor(CMOS) image sensor having photodiode connected with a capacitor is provided to accumulate more electrons than a conventional photodiode by increasing the electron accumulation capacity of the photodiode. CONSTITUTION: A photodiode is formed in a semiconductor layer by an ion implantation method, aligned with the edge of an isolation layer. A capacitor is composed of a lower electrode, a dielectric layer and an upper electrode in contact with the photodiode, formed along the interface of the isolation layer and the photodiode on a plane.
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